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APT40GT60BR
600V, 80A, VCE(ON) = 2.1V Typical
Thunderbolt IGBT(R)
The Thunderbolt IGBT(R) is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT(R) offers superior ruggedness and ultrafast switching speed.
TO -24 7
Features
* Low Forward Voltage Drop * Low Tail Current * RoHS Compliant * RBSOA and SCSOA Rated * High Frequency Switching to 150KHz * Ultra Low Leakage Current
G C
E
C
G E
Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 105C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range
All Ratings: TC = 25C unless otherwise specified. Ratings
600 Volts 20 80 40 160 160A @ 600V 345 -55 to 150 Watts C Amps
Unit
Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA) Gate Threshold Voltage (VCE = VGE, IC = 500A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) 2 Gate-Emitter Leakage Current (VGE = 20V)
Min
600 3 1.6 -
Typ
4 2.15 -
Max
5
Unit
Volts 2.5 2.8 80 A 100 nA
052-6222 Rev C 11 - 2008
ICES IGES
2000
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristic
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT40GT60BR
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 40A TJ = 150C, RG = 5 , VGE = 15V, L = 100H, VCE= 600V Inductive Switching (25C) VCC = 400V VGE = 15V
4 5
Min 160 -
Typ 2190 220 130 8.0 200 12 86
Max -
Unit
pF
V
Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
nC
A 12 36 124 55 945 828 12 33 165 58 1342 1150 J ns J ns
IC = 40A RG = 5 TJ = +25C
Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
4 5
Inductive Switching (125C) VCC = 400V VGE = 15V IC = 40A RG = 5 TJ = +125C
-
Turn-Off Switching Energy 6
Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions
RJC RJC WT Torque VIsolation Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Terminals and Mounting Screws RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Min
2500
Typ
6.1 -
Max
0.36
Unit
C/W
N/A 10 1.1 g in*lbf N*m Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance.
052-6222 Rev C 11 - 2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
100 90 IC, COLLECTOR CURRENT (A) 80 70 60 50 40 30 20 10 0 TJ= 55C TJ= 125C TJ= 25C
V
GE
APT40GT60BR
150 125 100 75 50 25 0 15V 13V 11V 10V 9V 8V 7V 6V 0 5 10 15 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 40A C T = 25C
J
= 15V
0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0
16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate charge VCE = 120V VCE = 300V VCE = 480V
TJ= 25C
TJ= 125C 0 2
TJ= -55C
4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
6 5 4 3 2 IC = 20A 1 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 80A
IC = 80A 3 IC = 40A 2 1 0 IC = 200A
IC = 40A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
6
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 90 80
25
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 IC, DC COLLECTOR CURRENT (A) 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25
70 60 50 40 30 20 10 50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 0 25 052-6222 Rev C 11 - 2008
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
Typical Performance Curves
25 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 300 250 200
APT40GT60BR
20 VGE = 15V 15
VGE =15V,TJ=125C
150 100 50 0
VCE = 400V RG = 5 L = 100H VGE =15V,TJ=25C
10
VCE = 400V TJ = 25C, or 125C RG = 5 L = 100H
5
0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 100 90 80 tr, RISE TIME (ns) 70 tr, FALL TIME (ns) 60 50 40 30 20 10 0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4500 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J) 4000 3500 3000 2500 2000 1500 1000 500 0
TJ = 25C TJ = 125C
V = 400V CE V = +15V GE R = 5
G
0
0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 175 150 125 100 75 50 25 0
TJ = 125C, VGE = 15V TJ = 25C, VGE = 15V RG = 5, L = 100H, VCE = 400V
RG = 5, L = 100H, VCE = 400V
TJ = 25 or 125C,VGE = 15V
0
0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3000 2500 2000 1500 1000 500 0
TJ = 25C
V = 400V CE V = +15V GE R = 5
G
TJ = 125C
0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) 7000 6000 5000 4000 3000 2000 1000 0 0
Eoff,40A Eon2,40A Eoff,20A Eon2,20A Eoff,80A
V = 400V CE V = +15V GE T = 125C
J
0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 5000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 5
G
Eon2,80A
4000
Eon2,80A
3000
052-6222 Rev C 11 - 2008
2000
Eoff,80A Eon2,40A Eoff,40A Eon2,20A Eoff,20A
1000
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
Typical Performance Curves
100,000 Cies C, CAPACITANCE (pF) 10,000 200 175 IC, COLLECTOR CURRENT (A) 150 125 100 75 50 25
APT40GT60BR
Coes 1000 Cres
100
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0
0.40 ZJC, THERMAL IMPEDANCE (C/W) 0.35 0.30 0.7 0.25 0.20 0.15 0.10 0.05 0 10-5 10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 1.0 0.1 0.05 0.5
Note:
D = 0.9
PDM
0.3
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
80 FMAX, OPERATING FREQUENCY (kHz) 70 60 50 40 30 20 10 0
T = 125C J T = 75C C D = 50 % V = 400V CE R = 1.0
G
TJ (C)
TC (C)
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 =
75C
ZEXT
.07172
Dissipated Power (Watts)
.1434 .0040
.1451 0.1270
.00157
Pdiss - P cond E on2 + E off TJ - T C R JC
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Pdiss =
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
35 45 55 65 75 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
25
052-6222 Rev C 11 - 2008
APT40GT60BR
10%
APT30DQ60
Gate Voltage
td(on) TJ = 125C tr 90% Collector Current
V CC
IC
V CE
10% 5%
5% CollectorVoltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
90% TJ = 125C
Gate Voltage td(off)
tf Collector Current
10%
0
CollectorVoltage
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 (B) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
052-6222 Rev C 11 - 2008
Gate Collector Emitter
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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